| Scientific principles of field emitters, nanoelectronic systems based on carbon nanotubes in dielectric layers on silicon substrate |
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The study field emission properties of carbon nanotubes formed on the basis of the structures Si/SiO2/Ni, showed the promise of their use as cathodes in field emission and low threshold for long-term stability.
Deposition of nickel into the pores
The pores in the layer of SiO2 on n-Si substrate is partially filled with nickel
Synthesis of carbon nanotubes
Carbon nanotubes grown on Ni clusters
Investigation of field emission properties of cathodes made of carbon nanotubes
Measurement of the luminosity with increasing applied potential (cathode-anode distance of 1 mm). As the cathode structure used in CNT (the results obtained at the Institute of Inorganic Chemistry. Nikolaev, SB RAS) Depending on the distance between planes cathode-anode, a change in luminosity depending on the area of the applied field. By increasing the interelectrode distance decreases the threshold of field emission current, which also leads to the appearance of luminosity at lower field strengths. With an interelectrode distance of 0.1 mm light field area of less than 20%, even taking into account the faint regions. The increase in cathode-anode distance of 0.5 mm resulted in a decrease of the threshold field for the luminosity of the screen, and an increase in the relative light-emitting area. With further increase of the interelectrode distance of 1 and 3 mm was observed saturation of the light curve. The study field emission properties of carbon nanotubes formed on the basis of the structures Si/SiO2/Ni, showed the promise of their use as cathodes in field emission and low threshold for long-term stability.
Cooperation
The project Project on the Programme of Belarusian Republican Foundation for Fundamental Research "Nauka - MS"
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