English (UK)
Development of physical principles of the creation of new spintronic elements on the base of metal-oxide compounds

Characteristic property of magnetic-field controlled sensor on the base of multilayer structures is based on the phenomenon of spin polarization of conduction electrons.

differences between traditional electronics and spintronics


Principle of the functioning of a magnetic field sensor on the base of tunneling magnetoresistance.

principle of the functioning of a magnetic field sensor on the base of tunneling magnetoresistance

green Sr2FeMoO6 magnetic layers
red Al2O3 dielectric layers


For a realization of the spin-depedent tunnelling effect of a charge transfer, Sr2FeMoO6 thin films (~200 nm) are used, which are separated with a thin Al2O3 dielectric layer (~ 5-7 nm).

Devices based on magnetic tunnel junctions (MTJ) are basic elements of spintronics. In the previous years, MTJ-structures on the base of La2/3Sr1/3MnO3 were realized with tunneling magnetoresistance of more than 1800 % at 4.2 K, but Curie temperature (TC) less than 300 K have made wide practical applications of this material impossible. In this concern many investigations presently are focused on the double perovskite Sr2FeMoO6-δ (SFMO) due to both high Curie temperature (TC > 415 K) and half-metallic nature of its transport properties. Nearly 100 % spin polarization of conductive electrons of this compound is attractive in the light of the potential application to the magnetoelectronic as magnetic memories or sensors.

schemes for spintronic devices

Schemes for spintronic devices.



Areas of work