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Development of magnetically operated sensors based on nanoscale granular structures and multilayer structures

Obtaining of thin films Sr2FeMoO6-δ
SFMO films and multilayer structures based on the methods of ion-beam and magnetron sputtering.

installation of ion-beam and magnetron sputtering

 

Target for sputtering was prepared by conventional method of solid state reaction from oxides and carbonates. SFMO/Al2O3/SFMO trilayer structure was deposited onto “Policor” commercial substrates covered with platinum layer. Thickness of upper and lower SFMO electrodes composes 500 nm. Al2O3 layer with thickness 8 nm was used as insulating barrier. Pt layers were deposited onto as electrical contacts for transport measurements. Created nanostructures can be used as operating components of a magnetic field sensor. The studies of electrophysical properties of these structures were carried out in temperature range 4-300 К and in transverse magnetic fields up to 12 T.

sketch of the multilayer heterostructure

Sketch of the multilayer heterostructure Sr2FeMoO6±δ / Al2O3 / Sr2FeMoO6±δ.

 

optical image of the operating components of a magnetic field sensor

Optical image of the operating components of a magnetic field sensor.

 

Field of application:
Magnetic field sensors; highly sensitive information readers; spintronic devices.

 

Unique characteristic properties:
High Curie temperature (~420 К) provides a possibility of room temperature application of strontium ferromolybdate – based devices at room temperatures. The nature of Sr2FeMoO6 band structure leads to a practically complete spin polarization of charge carriers.

 

Main technical characteristics:

  • Area occupied by one element is 800 μm2;
  • Magnetoresistance at temperature 4.2 К in the field of 1 T is 30%;
  • Magnetoresistance at temperature 300 К in the field of 1 T is 15%;
  • The range of operating currents is 1-1000 μА;
  • Saturation magnetic induction in the fields ~1 T.

 

This development is protected by 2 Patents of Belarus.

 

 

Areas of work