English (UK)
TEMPOS structures

TEMPOS (Tunable Electronic Material in Pores in Oxide on Semiconductors) structures exhibit properties similar to the properties of electronic devices such as MOS structures with nonlinear volt-ampere characteristics, including negative differential resistance. At the same time TEMPOS-structures have the additional free parameters such as shape and density of etched tracks, position, height, diameter, and type of material that is embedded in the tracks.


Schematic diagram TEMPOS-structure.
(1) a semiconductor substrate, (2) dielectric layer, (3) channels of ion tracks filled with metal (s), (4) the electrical contacts on the surface of the insulator, (5) contact the manager at the semiconductor surface.

This provides more opportunities for the creation of micro-and nanoelectronic devices. For example, a more complex internal structure TEMPOS compared to conventional electronic components simplifies the design of electronic circuits. Reducing the number of peripheral elements leads to a gain in speed of operation and greater reliability in the first place, the radiation resistance, since the addition of a small number of channels of charge transfer during irradiation to ~ 108 existing (ie, ion tracks) will not significantly impact on performance.




  • Dresden University of Technology, Hermholtzstr. 18, D-01062 Dresden, Germany
  • Novosibirsk State Technical University, Karl Marx Ave. 20, 630092 Novosibirsk,
  • Hahn-Meitner-Institute, Glienicker Str. 100, D-14109 Berlin, Germany
  • Беларусь, Белорусский государственный университет, ул.Ленинградская, 14, 220050 г.Минск
  • Hahn-Meitner Institute, Glienicker Str. 100, D-14109 Berlin, Germany
  • University of Hagen, Haldener Str. 182, D-58084 Hagen, Germany


The project

Programme of the Russia – Belarus Union State "Nanotechnology Union State"


Links to articles

Petrov A.V., Kaniukov E.Yu., Demyanov S.E., Nocke A., Günther M., Gerlach G., Berdinsky A.S., Fink D., Kotov D.A., Humidity and Temperature Sensor Properties of P-Si/Pi/C60 Nanostructure with Swift Heavy Ion Tracks // Сборник материалов международной конференции “Nanomeeting–2009” (“Structure, Physics, Chemistry and Application of Nanostructures”), 26–29 мая 2009 г., Минск, Беларусь, с. 628-631.

Канюков Е.Ю., Петров А.В., Демьянов С.Е., Иванова Ю.А., Иванов Д.К., Стрельцов Е.А., Федотов А.К., Fink D., Fahrner W.R., Физические принципы создания наносенсоров на основе систем Si/SiO2/металл с треками быстрых тяжелых ионов // Сборник докладов международной конференции «Актуальные проблемы физики твердого тела», 23-26 октября 2007 г., Минск, Беларусь, том 2, с.384-388.



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