Tasks of the modern technology are concerned not only with the use and improvement of conventional methods of micron- and submicron-scale structures fabrication, but with a development of new principles and technological processes of the creation of nanoelectronic devices. In this concern an interest to structures created by swift heavy ion (SHI) track technology obvious.
The Si/SiO₂/Metal nanostructure was formed with the use of the SHI track technology. By means of this technology a matrix with statistically uniform distribution of latent SHI tracks in a silicon dioxide layer has been created. After chemical etching ion tracks were transformed in pores having form of frustums with an average diameter 150 nm and height corresponding to SiO₂ layer thickness (200 nm). In this nanoporous matrix alternating layers (each layer thickness ~10 nm) of ferromagnetic (Ni) and nonmagnetic (Cu) metals was electrochemically deposited.

For the first time studied the electrical and galvanomagnetic properties of the structures Si/SiO₂/metal in a wide temperature range (1,8-310 K) and magnetic fields (up to 14 T), which allowed to identify the dominant mechanisms of electron transport in the metal-insulator-semiconductor in various temperature ranges.

Temperature dependence of the resistance in zero magnetic field and in the field of 12 T.	Positive magnetoresistance at low temperatures (below 50 К).

For the first time demonstrated the existence of a positive magnetoresistance in structures Si/SiO₂/Ni at temperatures below 100 K, increasing with decreasing temperature, reaching 1000% at temperatures of ~ 20 K. Based on these results, a model highly sensitive magnetic field sensor. Potential use of sensor data: the equipment for space application, which operates at liquid-hydrogen cooling.

Developed highly-sensitive magnetic field sensor has following characteristics:

• magnetic field range: up to 14 T
• magnetic field sensitivity: 50-1000 μV/mT
• magnetoresistive effect (T = 200-300 K): 30%
• magnetoresistive effect (T = 20-30 K): 50-1000%
• power: ~1 μW

The project

Programme of the Russia – Belarus Union State "Nanotechnology Union State"