Electrical-physical and galvanomagnetic properties |
Using the swift heavy ion tracks, a structure n-Si/SiO2/Ni (fig.1). A schematic diagram of contacts placement on the Si/SiO2/Metal structure for measurements of electrical-physical and galvanomagnetic properties:
Based on a series of experiments (fig.3) determined that the system Si/SiO2/Ni in different temperature ranges dominated by a few mechanisms of electromigration (fig.5). Fig.3. Temperature dependences of resistance in zero magnetic field and in the field 12 T.
Investigations of electrical-physical and galvanomagnetic properties of S/SiO2/Ме (Cu, Ni) samples in temperature range 4-300 K and magnetic fields up to 14 T were carried out on the universal measurement system "TAE EV 031" ("Cryogenic Limited" company) (fig.4).
Mechanisms of electron transport in different temperature ranges:
Fig. 5. Schematic representation of the mechanisms of charge transport in the structure n-Si/SiO2/Ni in different temperature regions.
At low temperatures (18 - 50 K) in structures containing nickel clusters revealed the presence of a positive magnetoresistance, which grows with decreasing temperature, reaching at T = 20 K value of 1000% (Fig. 6).
Fig 6. A plot of the magnetoresistance of the structure n-Si/SiO2/Ni at low temperatures.
On the basis of this dependence is possible to create highly sensitive sensors of magnetic devices for space application, operating at liquid-hydrogen cooled.
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